发明名称 |
COMPLEMENTARY METAL OXIDE HETEROJUNCTION MEMORY DEVICES AND METHODS RELATED THERETO |
摘要 |
A resistive memory device is disclosed. The memory device comprises one or mo re metal oxide layers. An oxygen vacancy or ion concentrations of the one or more metal oxide layer is controlled in the formation and the operation of the memory device to provide robust memory operation. |
申请公布号 |
US2014117298(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
US201313831935 |
申请日期 |
2013.03.15 |
申请人 |
4DS, INC. |
发明人 |
CHEN DONGMIN;CLEVELAND LEE;DESU SESHUBABU;PFLUGER KURT;YANG-SCHARLOTTA JEAN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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