| 摘要 |
Disclosed is a manufacturing method of an MOSFET, which comprises: forming a shallow trench in a semiconductor substrate (201), wherein the shallow trench surrounds an active region; carrying out first ion injection to one side wall of the active region through the shallow trench to form a first heavily doped region in the one side wall; carrying out second ion injection to another opposite side wall of the active region through the shallow trench to form a second heavily doped region in the another side wall; filling the shallow trench with an insulating material to from a shallow trench isolation (205) for limiting the active region of the MOSFET; forming gate stack layers (206, 207) and an insulating layer (208) on the semiconductor substrate (201), the insulating layer (208) being used as a side wall surrounding the gate stack layers (206, 207) and a cap covering the gate stack layers (206, 207); forming an opening in the semiconductor substrate (201) by using the shallow trench isolation (205), the first heavily doped region (204-1), the second heavily doped region (204-2) and the insulating layer (208) as hard masks; growing epitaxially a semiconductor layer by using the bottom and the side wall of the opening as a growth seed layer; and carrying out ion injection to the semiconductor layer to form a source region(209) and a drain region (209). |
