| 发明名称 |
Epitaxial Wafer, Method for Fabricating the Same, and Semiconductor Device Including the Same |
| 摘要 |
Disclosed is an epitaxial wafer including a substrate and an epitaxial structure disposed on the substrate, wherein the epitaxial structure is doped with an n-type or p-type dopant and has a doping uniformity of 10% or less. |
| 申请公布号 |
US2014117381(A1) |
申请公布日期 |
2014.05.01 |
| 申请号 |
US201314068134 |
申请日期 |
2013.10.31 |
| 申请人 |
LG INNOTEK CO., LTD. |
发明人 |
KANG SEOK MIN;KIM JI HYE |
| 分类号 |
H01L21/20;H01L29/16;H01L29/66;H01L29/78 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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