SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A silicon carbide semiconductor device (1) has an element region (IR) and a guard ring region (5). The element region (IR) is provided with a semiconductor element (7). The guard ring region (5) surrounds the element region (IR) in a plane view and has first conductor type. The semiconductor element (7) includes a drift region (12) that has a second conductor type that differs from the first conductor type. The guard ring region (5) has straight line regions (B) and curved regions (A) linked to the straight line regions (B). The value of the radius (R) of curvature of the inner peripheral parts (2c) of the curved regions (A) divided by the thickness (T1) of the drift region (12) is 5 - 10. Thus, a silicon carbide semiconductor device (1) in which the breakdown voltage can be improved while suppressing reductions in ON current can be provided