METHOD FOR FORMING A DOPED SILICON INGOT OF UNIFORM RESISTIVITY

摘要

A method for forming a silicon ingot comprises the following steps: providing (F1) a silicon ingot of variable electrical resistivity and containing interstitial oxygen, determining (F2) the concentration of interstitial oxygen in different areas of the silicon ingot, calculating (F3) the concentration of thermal donors to be created in the different areas to achieve a target electrical resistivity value, and subjecting (F5) the different areas of the silicon ingot to annealing so as to form the thermal donors. The annealing temperature in each area is determined (F4) from the concentrations of thermal donors and interstitial oxygen in the area and from a predefined annealing time.