| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor capable of increasing the stability of sensor output by reducing stress given to a piezoresistive element.SOLUTION: The semiconductor pressure sensor includes: a semiconductor substrate 1 having a diaphragm 2; plural piezoresistive elements R1-R4 formed on the surface of the diaphragm 2 to detect a pressure applied to the diaphragm 2 as a change of resistance value; plural diffusion wirings 4a-4h each formed on the surface of the semiconductor substrate 1 being connected to the plural piezoresistive elements R1-R4 to constitute a bridge circuit; an insulation lamination part 3 covering the surface of the semiconductor substrate 1 including the surfaces of the piezoresistive elements R1-R4 and the diffusion wirings 4a-4h; a conductor layer 8 formed in the circuit forming region 1b of the diaphragm 2 inside the insulation lamination part 3; and a groove 7 formed in the insulation lamination part 3 between the piezoresistive element R and the circuit forming region 1b.</p> |
