发明名称 |
METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN-FILM SOLAR CELLS BY MEANS METHOD FOR CRYSTALLIZING LARGE-AREA AMORPHOUS SILICON THIN FILM USING LINEAR ELECTRON BEAM |
摘要 |
One embodiment of the present invention relates to a method for manufacturing polycrystalline silicon thin-film solar cells by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method for manufacturing polycrystalline silicon thin-film solar cells by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous silicon layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above the type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area. |
申请公布号 |
WO2014065464(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
WO2012KR11060 |
申请日期 |
2012.12.18 |
申请人 |
KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY |
发明人 |
JEONG, CHAE HWAN;LEE, SUN HWA;RYU, SANG;KIM, HO SUNG;BOO, SEONG JAE |
分类号 |
H01L31/042;H01L31/18 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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地址 |
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