发明名称 INTERMEDIATE BAND SEMICONDUCTORS, HETEROJUNCTIONS, AND OPTOELECTRONIC DEVICES UTILIZING SOLUTION PROCESSED QUANTUM DOTS, AND RELATED METHODS
摘要 A semiconductor includes first quantum dots and second quantum dots of a lesser amount, which are dispersed throughout the first quantum dots. The second quantum dots have a different size or composition than the first quantum dots such that the second quantum dots have a first exciton peak wavelength longer than a first exciton peak wavelength of the first quantum dots. The quantum dot layer includes a valence band, a conduction band, and an intermediate band having an energy level within a bandgap between the valence band and the conduction band. The quantum dots may be solution processed. The semiconductor may be utilized to form an electronic heterojunction, and optoelectronic devices including the electronic heterojunction.
申请公布号 CA2889009(A1) 申请公布日期 2014.05.01
申请号 CA20132889009 申请日期 2013.10.25
申请人 RESEARCH TRIANGLE INSTITUTE 发明人 LEWIS, JOHN;KLEM, ETHAN
分类号 H01L31/04;H01L31/18 主分类号 H01L31/04
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