BARRIER LAYER FOR COPPER INTERCONNECT

摘要

A method for forming an interconnect structure includes forming a dielectric layer overlying a substrate, forming a metal-containing layer in the dielectric layer, forming a barrier layer overlying the metal-containing layer, and performing a thermal process to form a metal oxide layer underlying the conductive layer. The metal oxide layer is a barrier layer formed at the boundary between the dielectric layer and the metal-containing layer.