| 摘要 |
The present invention provides an apparatus for treating a substrate. The apparatus for treating a substrate includes a chamber, a support unit which is provided in the chamber and supports the substrate, a heating member which heats the substrate supported by the support unit, a gas supply unit which supplies a process gas in the chamber, and a liner unit which is provided to surround the inner wall of the camber. The liner unit includes a side liner which surrounds the inner sidewall of the chamber and provides a hollow cylindrical shape, an upper liner which surrounds the upper wall of the chamber and located on the upper part of the side liner, and a first elastic member which is provided between the upper wall of the chamber and the upper liner. |
