发明名称 |
TA-MRAM cell with seed layer having improved data retention, reduced writing and reading fields |
摘要 |
<p>The present disclosure concerns a MRAM cell (1) comprising a magnetic tunnel junction (2) comprising: a sense layer (21) having a sense magnetization (210) that is freely switchable; a storage layer (23) having a storage magnetization (230); a tunnel barrier layer (22) comprised between the sense and the storage layers (21, 23); and an antiferromagnetic layer (24) pinning the storage layer (23) at a low temperature threshold and freeing it at a high temperature threshold; wherein the tunnel magnetic junction (2) further includes a seed layer (25) comprising a NiFe -based alloy and being arranged such that the antiferromagnetic layer (24) is comprised between the seed layer (25) and the storage layer (23). The present disclosure further concerns a magnetic memory device comprising a plurality of the MRAM cell (1) and a method for writing and a self-referenced method for reading the MRAM cell (1).</p> |
申请公布号 |
EP2725579(A1) |
申请公布日期 |
2014.04.30 |
申请号 |
EP20120290374 |
申请日期 |
2012.10.29 |
申请人 |
CROCUS TECHNOLOGY S.A. |
发明人 |
BANDIERA, SEBASTIEN;DUCRUET, CLARISSE;PREJBEANU, IOAN LUCIAN |
分类号 |
G11C11/16 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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