| 摘要 |
<p>A trench gate structure including a p base layer (2), an n + emitter region (8), a trench (3), a gate oxide film (10), and a doped polysilicon gate electrode (11) is provided in an active region (30). A p-type extension region (C) formed by extending the p base layer (2) to an edge termination structure region (40) is provided in the circumference of a plurality of trenches (3). One or more annular outer trenches (3a) which are formed at the same time as the plurality of trenches (3) are provided in the p-type extension region (C). The annular outer trenches (3a) surround all of the trenches (3). A second gap (b) between the annular outer trench (3a) and the outermost trench (3) or between adjacent annular outer trenches (3a) is less than a first gap (a) between adjacent trenches (3). In this way, it is possible to provide a trench gate insulated gate semiconductor device capable of preventing a reduction in breakdown voltage and improving turn-off breakdown voltage.</p> |
