发明名称 |
Method for forming contact hole |
摘要 |
A method for forming contact holes includes following steps. A substrate including a dense region and an isolation region is provided. A material layer is formed on the substrate. Sacrificed patterns are formed on the material layer in the dense region, wherein there is a first opening between the two adjacent sacrificed patterns. A spacer is formed on each of two sides of each of the sacrificed patterns, wherein the spacers are separated from each other. The sacrificed patterns are removed to form a second opening between two adjacent spacers. A planar layer is formed to fill up the second openings. A first slit is formed in the planar layer, wherein the first slit exposes a portion of the material layer under the second openings. The portion of the material layer exposed by the first slit is removed to form third openings in the material layer. |
申请公布号 |
US8709946(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201213364252 |
申请日期 |
2012.02.01 |
申请人 |
TSAI MENG-FENG;CHANG YI-SHIANG;LIN CHIA-CHI;CHEN I-HSIN;WU CHIA-MING;POWERCHIP TECHNOLOGY CORPORATION |
发明人 |
TSAI MENG-FENG;CHANG YI-SHIANG;LIN CHIA-CHI;CHEN I-HSIN;WU CHIA-MING |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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