发明名称 Method for forming contact hole
摘要 A method for forming contact holes includes following steps. A substrate including a dense region and an isolation region is provided. A material layer is formed on the substrate. Sacrificed patterns are formed on the material layer in the dense region, wherein there is a first opening between the two adjacent sacrificed patterns. A spacer is formed on each of two sides of each of the sacrificed patterns, wherein the spacers are separated from each other. The sacrificed patterns are removed to form a second opening between two adjacent spacers. A planar layer is formed to fill up the second openings. A first slit is formed in the planar layer, wherein the first slit exposes a portion of the material layer under the second openings. The portion of the material layer exposed by the first slit is removed to form third openings in the material layer.
申请公布号 US8709946(B2) 申请公布日期 2014.04.29
申请号 US201213364252 申请日期 2012.02.01
申请人 TSAI MENG-FENG;CHANG YI-SHIANG;LIN CHIA-CHI;CHEN I-HSIN;WU CHIA-MING;POWERCHIP TECHNOLOGY CORPORATION 发明人 TSAI MENG-FENG;CHANG YI-SHIANG;LIN CHIA-CHI;CHEN I-HSIN;WU CHIA-MING
分类号 H01L21/44 主分类号 H01L21/44
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