METHOD OF FABRICATING GALLIUM NITRDED BASED SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a gallium nitride based semiconductor device is disclosed. The method comprises: a step of preparing a gallium nitride substrate having lower and upper surfaces; a step of forming a semiconductor laminated structure by growing gallium nitride based semiconductor layers on the upper surface of the gallium nitride substrate; a step of forming a supporting plate on the semiconductor laminated structure; and a step of separating the gallium nitride substrate from the semiconductor laminated structure. The step of separating the gallium nitride substrate comprises a step of irradiating laser from the lower surface of the gallium nitride substrate. The laser passes through the lower surface of the gallium nitride substrate. A laser absorption area is formed inside a structure which is made of the gallium nitride substrate and the semiconductor laminated structure.