发明名称 |
Forming agent for gate insulating film of thin film transistor |
摘要 |
It is an object to provide a novel forming agent for a gate insulating film that not only provides high insulating properties for the gate insulating film but also takes account of the electric characteristics of a thin film transistor element. A forming agent for a gate insulating film of a thin film transistor characterized by comprising an oligomer compound or a polymer compound including a structural unit containing a pyrimidinetrione ring having a hydroxyalkyl-containing group as a substituent on a nitrogen atom; a gate insulating film formed by the forming agent; and a thin film transistor. |
申请公布号 |
US8710491(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US200913131807 |
申请日期 |
2009.11.26 |
申请人 |
MAEDA SHINICHI;KISHIOKA TAKAHIRO;NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
MAEDA SHINICHI;KISHIOKA TAKAHIRO |
分类号 |
H01L29/08;H01L27/146;H01L31/062;H01L35/24;H01L51/00 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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