发明名称 |
Method of manufacturing III-nitride crystal |
摘要 |
Provided is a method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001}, designated by choice, the III-nitride crystal manufacturing method including: a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation; a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; and a step of growing III-nitride crystal onto the major surfaces of the substrates. |
申请公布号 |
US8709923(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201313762401 |
申请日期 |
2013.02.08 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MIZUHARA NAHO;UEMATSU KOJI;MIYANAGA MICHIMASA;TANIZAKI KEISUKE;NAKAHATA HIDEAKI;NAKAHATA SEIJI;OKAHISA TAKUJI |
分类号 |
H01L21/20;C30B19/12;C30B25/18 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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