发明名称 |
Method for fabricating a nitrided silicon-oxide gate dielectric |
摘要 |
A method of fabricating a gate dielectric layer. The method includes: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs. |
申请公布号 |
US8709887(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US20070778238 |
申请日期 |
2007.07.16 |
申请人 |
BURNHAM JAY S.;NAKOS JAMES S.;QUINLIVAN JAMES J.;ROQUE, JR. BERNIE;SHANK STEVEN M.;WARD BETH A.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BURNHAM JAY S.;NAKOS JAMES S.;QUINLIVAN JAMES J.;ROQUE, JR. BERNIE;SHANK STEVEN M.;WARD BETH A. |
分类号 |
H01L21/336;H01L;H01L21/31;H01L21/469 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|