发明名称 Nonvolatile semiconductor memory device and method for controlling the same
摘要 During data read process, a control circuit gives a read voltage to a selected word line connected to a selected memory cell, and gives read pass voltages, for turning on memory cells, to unselected word lines connected to unselected memory cells. The control circuit respectively gives a first read pass voltage, a second read pass voltage, and a third read pass voltage to a first unselected word line adjacent to the selected word line at a side of at least one of a bit line and a source line, a second unselected word line adjacent to the first unselected word line at a side opposite to the selected word line, and a third unselected word line adjacent to the second unselected word line at a side opposite to the selected word line. The second read pass voltage is higher than the third read pass voltage.
申请公布号 US8711634(B2) 申请公布日期 2014.04.29
申请号 US201113335095 申请日期 2011.12.22
申请人 FUTATSUYAMA TAKUYA;KAMIGAICHI TAKESHI;KABUSHIKI KAISHA TOSHIBA 发明人 FUTATSUYAMA TAKUYA;KAMIGAICHI TAKESHI
分类号 G11C16/04 主分类号 G11C16/04
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