SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

The present invention relates to a semiconductor device and a manufacturing method thereof. According to one embodiment of the present invention, the semiconductor device and the manufacturing method thereof include a first impurity injection region and a second impurity injection region; a storage node contact which touches the first impurity injection region; a bit line; a bit line node contact which is arranged between the bit line and the impurity injection region; and a spacer. According to the present invention, a leakage current between the storage node contact and the bit line node contact can be prevented.