发明名称 POLISHING SLURRY COMPOSITION AND SUBSTRATE OR WAFER POLISHING METHOD USING THE SAME
摘要 The present invention relates to a polishing slurry composition having a selection ratio of a nitride film and a method for polishing a wafer or a substrate using the same. The polishing slurry composition of the present invention achieves a higher polishing selection ratio of a nitride film compared to an oxide film and manufactures a polishing particle by a liquid phase method to reduce an occurrence of a micro-stretch on the surface of a substrate or a wafer. In addition, a high dispersion stability is maintained to prevent an aggregation of the polishing particle to reduce the occurrence of the micro-stretch.
申请公布号 KR101388106(B1) 申请公布日期 2014.04.28
申请号 KR20120138838 申请日期 2012.12.03
申请人 K.C.TECH CO., LTD.;IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 PAIK, UN GYU;SEO, JI HOON;HAN, MOUNG HUN;CHOI, NAK HYOUN;JUNG, KI HWA;HWANG, JUN HA
分类号 C09K3/14;B24B1/00;H01L21/304 主分类号 C09K3/14
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