POLISHING SLURRY COMPOSITION AND SUBSTRATE OR WAFER POLISHING METHOD USING THE SAME
摘要
The present invention relates to a polishing slurry composition having a selection ratio of a nitride film and a method for polishing a wafer or a substrate using the same. The polishing slurry composition of the present invention achieves a higher polishing selection ratio of a nitride film compared to an oxide film and manufactures a polishing particle by a liquid phase method to reduce an occurrence of a micro-stretch on the surface of a substrate or a wafer. In addition, a high dispersion stability is maintained to prevent an aggregation of the polishing particle to reduce the occurrence of the micro-stretch.
申请公布号
KR101388106(B1)
申请公布日期
2014.04.28
申请号
KR20120138838
申请日期
2012.12.03
申请人
K.C.TECH CO., LTD.;IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
发明人
PAIK, UN GYU;SEO, JI HOON;HAN, MOUNG HUN;CHOI, NAK HYOUN;JUNG, KI HWA;HWANG, JUN HA