发明名称 |
METHOD FOR TREATING SUBSTRATE |
摘要 |
Disclosed is a method for treating a substrate. The method comprises providing a substrate where a first thin film and a second thin film are formed; forming an etch byproduct on the upper surface of the first thin film by supplying an upper flow etch gas onto the substrate; etching the first thin film by performing a thermal process on the substrate and removing the etch byproduct; and selectively removing one of the first thin film and the second thin film by supplying a lower flow etch gas onto the substrate. [Reference numerals] (AA) Start; (BB) End; (S10) Providing a substrate where a first thin film and a second thin film are formed; (S20) Forming an etch byproduct on the upper surface of the first thin film by supplying an upper flow etch gas onto the substrate; (S30) Removing the etch byproduct by performing a thermal process on the substrate; (S40) Selectively removing one of the first thin film and the second thin film by supplying a lower flow etch gas onto the substrate |
申请公布号 |
KR20140049311(A) |
申请公布日期 |
2014.04.25 |
申请号 |
KR20120115427 |
申请日期 |
2012.10.17 |
申请人 |
PSK INC. |
发明人 |
KIM, BYOUNG HOON;LEE, SUK JONG |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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