发明名称 |
FABRICATING METHOD OF A SEMICONDUCTOR DEVICE |
摘要 |
A fabricating method of a semiconductor device includes stacking a high-k dielectric film not containing silicon (Si) and an insulating film containing silicon (Si) on a substrate, and diffusing Si contained in the insulating film into the high-k dielectric film by annealing the substrate having the high-k dielectric film and the insulating film stacked thereon. |
申请公布号 |
US2014113443(A1) |
申请公布日期 |
2014.04.24 |
申请号 |
US201314015414 |
申请日期 |
2013.08.30 |
申请人 |
SUMSUNG ELECTRONICS CO., LTD. |
发明人 |
WON SEOK-JUN;KIM WEON-HONG;SONG MOON-KYUN;JUNG HYUNG-SUK |
分类号 |
H01L29/51 |
主分类号 |
H01L29/51 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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