| 摘要 |
<p>Provided in the present invention is a semiconductor structure having beryllium oxide, comprising: a semiconductor substrate (100), and, formed on the semiconductor substrate (100) and alternately staggered, multiple insulating oxide layers (201, 202,…20x) and multiple monocrystalline semiconductor layers (301, 302,…30x), where the material of the insulating oxide layer (201) in contact with the semiconductor substrate (100) is either one or a combination of many among beryllium oxide, silicon dioxide, and silicon oxynitride, and the material of the remaining insulating oxide layers (202,…20x) is monocrystalline beryllium oxide.</p> |
