| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for enhancing the dimensional accuracy of a resist mask, and enhancing transfer accuracy for a hard mask, in manufacture of a semiconductor device.SOLUTION: A method for processing a processed substrate includes (a) a step for exposing a resist mask to an active species of hydrogen generated by exciting plasma of hydrogen-containing gas while mounting the processed substrate on a mounting stand provided in a processing container, and (b) a step for etching a hard mask layer by exciting plasma of etchant gas. The plasma is excited by applying a high frequency power for plasma excitation to an upper electrode. In this method, the distance between the upper electrode and the mounting stand in the step (b) for etching a hard mask layer is set longer than the distance between the upper electrode and the mounting stand in the step (a) for exposing the resist mask to the active species of hydrogen. |
