发明名称 |
THIN FILM TRANSISTOR ARRAY |
摘要 |
<p>A thin film transistor array board is provided. A thin film transistor array board according to an embodiment of the present invention includes a substrate, a gate electrode which is located on the substrate, a gate insulating layer which is located on the gate electrode, a semiconductor layer which is located on the gate insulating layer and includes a channel region, a source electrode and a drain electrode which are located on the semiconductor layer and face each other, and a protection layer which covers the source electrode, the drain electrode, and the semiconductor layer. The semiconductor layer includes a first part which is overlapped with the source electrode and the gate electrode, and a second part which is overlapped with the drain electrode and the gate electrode. The first part of the semiconductor layer includes a hill part which protrudes from the first part.</p> |
申请公布号 |
KR20140048746(A) |
申请公布日期 |
2014.04.24 |
申请号 |
KR20120115045 |
申请日期 |
2012.10.16 |
申请人 |
SAMSUNG DISPLAY CO., LTD.;KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION |
发明人 |
AHN, BYUNG DU;LIM, JI HUN;LIM, JUN HYUNG;KIM, DAE HWAN;KIM, JAE HYEONG;LEE, JE HUN;JUNG, HYUN KWANG |
分类号 |
H01L29/786;G02F1/1368;H01L51/50 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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