| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that, since electric characteristics of a thin-film transistor which constitutes a circuit are important in a display device of an active matrix type, and the electric characteristics influences performance of the display device, accordingly, variation of the electric characteristics should be reduced by using an oxide semiconductor film containing In, Ga and Zn in an inverted stagger type thin-film transistor.SOLUTION: Three layers of a gate insulating film, an oxide semiconductor layer, and a channel protective film are successively film-formed by a sputtering method without being exposed to air. Also, in the oxide semiconductor layer, a characteristic structure where film thickness of a region overlapping with the channel protective film is thicker than that of a region in contact with a conductive film is achieved. |
