| 摘要 |
PROBLEM TO BE SOLVED: To provide an N-type group III nitride semiconductor having excellent smoothness showing good N-type properties by which a semiconductor element may be formed easily.SOLUTION: An N-type group III nitride semiconductor consists of a group III nitride single crystal containing Si as a donor impurity atom and having a composition represented by AlXInYGaZN (X, Y and Z are rational numbers satisfying relationships 0.6≤X≤0.8, 0≤Y≤0.01, 0.2≤Z≤0.4 and X+Y+Z=1.0). The Si concentration in the N-type group III nitride semiconductor is in the range of 1×10to 5×10(cm), the ratio of the total concentration of oxygen atoms and carbon atoms contained in the N-type group III nitride semiconductor {(O+C)/Si} is 0.05 or less, and the ratio of the electron concentration at 300 K and the Si concentration (e/Si) in the N-type group III nitride semiconductor is 0.3 to 0.8. |
