发明名称 MEMORY SYSTEM THAT DETECTS BIT ERRORS DUE TO READ DISTURBANCE AND METHODS THEREOF
摘要 Methods and memory systems are provided that can detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.
申请公布号 US2014115419(A1) 申请公布日期 2014.04.24
申请号 US201213658301 申请日期 2012.10.23
申请人 AHN SE-JIN;KIM YONG-HYEON;CHOI SUNG-UP;KIM YONG-KYEONG 发明人 AHN SE-JIN;KIM YONG-HYEON;CHOI SUNG-UP;KIM YONG-KYEONG
分类号 H03M13/09;H03M13/29 主分类号 H03M13/09
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