SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device (100) is provided with: a semiconductor base body (1); a first conductivity-type drift region (2), which has a trench in a part of an upper portion thereof, and which is disposed on a first main surface of the semiconductor base body (100); a second conductivity-type electric field relaxing region (4) that is disposed, at the bottom of the trench, merely on the areas at the periphery of the corner portions, said areas excluding a center portion at the bottom; an anode electrode (9) embedded in the trench; and a cathode electrode (10) that is disposed on a second main surface of the semiconductor base body (100), said second main surface facing the first main surface.