| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose capacitance can be more efficiently increased, and a semiconductor relay using the semiconductor device.SOLUTION: A semiconductor device 10 is formed using an SOI substrate 20 in which a buried insulating layer 40 is interposed between an active layer 50 and a support substrate 30. In the active layer 50 of the SOI substrate 20, a trench 51 having a dielectric layer 52 provided therein is formed, and a first semiconductor pattern 53 and a second semiconductor pattern 55 are formed so as to be arranged facing each other across the trench 51. The second semiconductor pattern 55 is formed so as to surround the first semiconductor pattern 53. |
