| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of producing the same, capable of suppressing a cost without complicating a production process by forming a thin-film transistor by using an oxide semiconductor film represented by zinc oxide.SOLUTION: In a semiconductor device, a gate electrode is formed on a substrate, a gate insulating film is formed so as to cover the gate electrode, an oxide semiconductor film is formed on the gate insulating film, and first and second conductive films are formed on the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel formation region. |
