A NEW METHOD OF CREATION OF DEFECTS USING X-RAY RADIATION AND ELECTRIC FIELD AND ITS USE

摘要

The goal of the invention is improvement of technologies of modification of material properties by decreasing expenditures of energy and time and extending possibilities for modification of materials by creating and maintaining a metastable state, which is characterized by a change in the structure of the material. The invention belongs to the technological field of manufacturing materials with desired properties, in part - to the field of methods of defect generation in crystals, and it can be applied in industries that apply the process of material doping with impurities in order to manufacture materials having a desired concentration of defects and an increased concentration of charge carriers, to create a metastable structural state of the material, as well as to measure energy and doses of radio waves.