| 摘要 |
This semiconductor device is characterized in being provided with: a first gate electrode (22a), which is provided on the inner side of a first insulating film, said first gate electrode being provided along one side wall of a first trench (21), and which is provided inside of a second trench (40); a shield electrode (22b), which is provided on the inner side of a second insulating film, said shield electrode being provided along the other side wall of the first trench (21), and which is provided inside of a third trench (50); a gate runner, which has a part thereof provided on the first gate electrode (22a) by having the second trench (40) extended, and which is connected to the first gate electrode (22a); and an emitter polysilicon layer (25a), which has a part thereof provided on the shield electrode (22b) by having the third trench (50) extended, and which is connected to the shield electrode (22b). Consequently, turn-on characteristics are improved with an increase of a small number of process steps, while suppressing cost increase and deterioration of yield rate. |
