| 摘要 |
Provided is a method for manufacturing a semiconductor structure, comprising: providing an SOI substrate (200), the substrate comprising a base layer (201), a buried insulation layer (202) and a surface active layer (203) in sequence from bottom to top; forming a gate stack on the substrate; removing the surface active layer (203) and a part of the buried insulation layer (202) on the two sides of the gate stack, so as to form an opening (240); and filling a semiconductor material into the opening (240), so as to form a source/drain region (250). Correspondingly, also provided is a semiconductor structure. According to the present invention, by extending the source/drain region into the buried insulation layer of the substrate, the parasitic capacitance between the gate electrode and the source-drain will not be increased while reducing the series resistance of the source-drain. |
