APPARATUS FOR GROWING SILICON SINGLE CRYSTAL INGOT

摘要

The present invention relates to an apparatus for growing a silicon single crystal ingot, including: a chamber for conducting a process for growing a silicon single crystal ingot; a crucible installed inside the chamber, for storing molten solution of silicon; a heater installed inside the chamber, for heating the crucible; and a gas injector which is installed on top of the chamber, and which injects a heat-conducting gas into the chamber by convection for removing heat from the surface of the ingot growing from the molten silicon solution. The heat-conducting gas includes helium.