| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance change memory in which the shapes of filaments formed in a variable resistance layer of a memory cell in a low-resistance state can be uniformed and variation in resistance values of the memory cell in the low-resistance state can be reduced.SOLUTION: A resistance change memory includes: a memory cell MC having a first electrode 11, a second electrode 12, and a variable resistance layer 13 which is arranged between the first electrode 11 and the second electrode 12 and transitions between a high-resistance state and a low resistance state; and a control circuit 21 that applies voltage between the first electrode 11 and the second electrode 12 and causes the memory cell MC to change from the high resistance state to the low resistance state. The control circuit 21 sets current, which flows through the memory MC, to a first upper-limit value, and performs first writing by applying a first voltage to the memory cell MC; and sets, after the first writing, the current, which flows through the memory cell MC, to a second upper-limit value and performs second writing by applying a second voltage to the memory cell MC. |
