SEMICONDUCTOR HAVING DIFFERENT VOID DIRECTION ISOLATION AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device includes a semiconductor substrate, a first device isolation layer which has a flat-type void formed in a direction parallel to the semiconductor substrate, a second device isolation layer which has a fin-type void formed in a direction vertical to the semiconductor substrate for reducing a void area in the fin-type void, and a transistor electrode which is formed between the second device isolation layers and in front and back of the second device isolation layer.