Semiconductor Fins with Reduced Widths and Methods for Forming the Same

摘要

A method includes forming Shallow Trench Isolation (STI) regions extending from a top surface of a semiconductor substrate into the semiconductor substrate, and after the forming the STI regions, oxidizing an upper portion of a semiconductor strip between the STI regions. A width of the upper portion of the semiconductor strip is reduced by the oxidizing. The STI regions are recessed, until a portion of the upper portion of the semiconductor strip is higher than a top surface of remaining portions of the STI regions to form a semiconductor fin.