METHOD AND STRUCTURE TO BOOST MOSFET PERFORMANCE AND NBTI

摘要

The present disclosure provides one embodiment of a method for forming a p type field effect transistor (FET) structure. A method includes forming a mask layer on a semiconductor layer - the mask layer includes an opening part which exposes the semiconductor region of a semiconductor substrate in the opening part - ; forming a n-type wall in the semiconductor region by performing the ion implantation of an n-type dopant on the semiconductor substrate through the opening part of the mask layer; and forming a Ge channel injection region in a n-wall by performing a Ge channel injection on the semiconductor substrate through the opening part of the mask layer. [Reference numerals] (152) Provide a semiconductor substrate; (154) Form a shallow trench isolation feature part that defines a plurality of semiconductor regions in the semiconductor substrate; (156) Form a mask layer patterned to have one or more openings; (158) Perform a first ion implantation of n-type dopant to form n-well using the mask layer as an implantation mask; (160) Perform a second ion implantation of germanium to form a Ge doped channel region in the n-well using the mask layer as an implantation mask