发明名称 Method and system for derived layer checking for semiconductor device design
摘要 A system and method are provided for enabling a systematic detection of issues arising during the course of mask generation for a semiconductor device. IC mask layer descriptions are analyzed and information is generated that identifies devices formed by active layers in the masks, along with a description of all layers in proximity to the found devices. The IC mask information is compared to a netlist file generated from the initial as-designed schematic. Determinations can then made, for example, as to whether all intended devices are present, any conflicting layers are in proximity to or interacting with the intended devices, and any unintended devices are present in the mask layers. Steps can then be taken to resolve the issues presented by the problematic devices.
申请公布号 US8707231(B2) 申请公布日期 2014.04.22
申请号 US201213562443 申请日期 2012.07.31
申请人 REBER DOUGLAS M.;SHROFF MEHUL D.;TRAVIS EDWARD O.;FREESCALE SEMICONDUCTOR, INC. 发明人 REBER DOUGLAS M.;SHROFF MEHUL D.;TRAVIS EDWARD O.
分类号 G06F17/50;G03F1/00;G06F19/00;G21K5/00 主分类号 G06F17/50
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