发明名称 |
Stacked single crystal compound semiconductor substrates |
摘要 |
A compound semiconductor substrate includes a first substrate and a second substrate made of single crystal gallium nitride. In each of the first substrate and the second substrate, one surface is a (0001) Ga-face and an opposite surface is a (000-1) N-face. The first substrate and the second substrate are bonded to each other in a state where the (000-1) N-face of the first substrate and the (000-1) N-face of the second substrate face each other, and the (0001) Ga-face of the first substrate and the (0001) Ga-face of the second substrate are exposed. |
申请公布号 |
US8704340(B2) |
申请公布日期 |
2014.04.22 |
申请号 |
US201313849742 |
申请日期 |
2013.03.25 |
申请人 |
DENSO CORPORATION |
发明人 |
FUJIBAYASHI HIROAKI;NAITO MASAMI;OOYA NOBUYUKI |
分类号 |
H01L29/04;H01L23/58;H01L29/20;H01L31/0304;H01L31/036 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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