发明名称 Stacked single crystal compound semiconductor substrates
摘要 A compound semiconductor substrate includes a first substrate and a second substrate made of single crystal gallium nitride. In each of the first substrate and the second substrate, one surface is a (0001) Ga-face and an opposite surface is a (000-1) N-face. The first substrate and the second substrate are bonded to each other in a state where the (000-1) N-face of the first substrate and the (000-1) N-face of the second substrate face each other, and the (0001) Ga-face of the first substrate and the (0001) Ga-face of the second substrate are exposed.
申请公布号 US8704340(B2) 申请公布日期 2014.04.22
申请号 US201313849742 申请日期 2013.03.25
申请人 DENSO CORPORATION 发明人 FUJIBAYASHI HIROAKI;NAITO MASAMI;OOYA NOBUYUKI
分类号 H01L29/04;H01L23/58;H01L29/20;H01L31/0304;H01L31/036 主分类号 H01L29/04
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