发明名称 |
STORAGE ELEMENT, STORAGE DEVICE, MAGNETIC HEAD |
摘要 |
PROBLEM TO BE SOLVED: To provide an ST-MRAM element ensuring stable recording with a low current, while improving the TMR characteristics.SOLUTION: A storage element includes a layer structure having a storage layer 17 the orientation of magnetization of which is changed in response to information, a magnetization fixed layer 15 having magnetization perpendicular to a film surface becoming a reference of information stored in the storage layer 17, and an intermediate layer 16 of a nonmagnetic body provided between the storage layer 17 and the magnetization fixed layer 15. When a carbon is inserted into the intermediate layer 16 and a current is fed in the lamination direction of the layer structure, orientation of magnetization of the storage layer 17 changes, and information is recorded for the storage layer 17. |
申请公布号 |
JP2014072394(A) |
申请公布日期 |
2014.04.21 |
申请号 |
JP20120217704 |
申请日期 |
2012.09.28 |
申请人 |
SONY CORP |
发明人 |
UCHIDA HIROYUKI;HOSOMI MASAKATSU;OMORI HIROYUKI;BESSHO KAZUHIRO;HIGO YUTAKA;ASAYAMA TETSUYA;YAMANE KAZUAKI |
分类号 |
H01L27/105;G11B5/39;H01L21/8246;H01L29/82;H01L43/08;H01L43/10 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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