发明名称 STORAGE ELEMENT, STORAGE DEVICE, MAGNETIC HEAD
摘要 PROBLEM TO BE SOLVED: To provide an ST-MRAM element ensuring stable recording with a low current, while improving the TMR characteristics.SOLUTION: A storage element includes a layer structure having a storage layer 17 the orientation of magnetization of which is changed in response to information, a magnetization fixed layer 15 having magnetization perpendicular to a film surface becoming a reference of information stored in the storage layer 17, and an intermediate layer 16 of a nonmagnetic body provided between the storage layer 17 and the magnetization fixed layer 15. When a carbon is inserted into the intermediate layer 16 and a current is fed in the lamination direction of the layer structure, orientation of magnetization of the storage layer 17 changes, and information is recorded for the storage layer 17.
申请公布号 JP2014072394(A) 申请公布日期 2014.04.21
申请号 JP20120217704 申请日期 2012.09.28
申请人 SONY CORP 发明人 UCHIDA HIROYUKI;HOSOMI MASAKATSU;OMORI HIROYUKI;BESSHO KAZUHIRO;HIGO YUTAKA;ASAYAMA TETSUYA;YAMANE KAZUAKI
分类号 H01L27/105;G11B5/39;H01L21/8246;H01L29/82;H01L43/08;H01L43/10 主分类号 H01L27/105
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