| 摘要 |
PROBLEM TO BE SOLVED: To provide a creation method of mask data for manufacturing an integrated circuit by using DSA technique, and to provide a manufacturing method of an integrated circuit device.SOLUTION: A creation method of mask data for forming a circuit pattern on a substrate by using an induction self-organization material comprises: a step of extracting a first region existing in an initial pattern including a plurality of wiring patterns extending in a first direction, but not existing in the circuit pattern; a step of setting a second region by stretching the first region in a second direction crossing the first direction, so as to straddle the first region in the second direction; and a third step of setting a third region including one or more second region, and in which the induction self-organization material is disposed. |
