| 摘要 |
Disclosed are a nitride semiconductor element and a manufacturing method thereof. In embodiments of the present invention, a middle barrier layer, i.e. a back barrier, is formed in the lower part of a channel layer to increase the amount of current in a two-dimensional electron gas channel. The embodiments of the present invention change aluminum content in aluminum gallium nitride composing the middle barrier layer step by step, thereby preventing reduction in the amount of current in the two-dimensional electron gas channel and improving epitaxy quality of a gallium nitride channel layer. The embodiments of the present invention are able to: minimize lattice mismatches while maintaining the semi-insulating characteristic of a gallium nitride (GaN) bulk, which is the benefit of a single layer; improve quality of the gallium nitride channel layer; and manufacture a normally-off type nitride semiconductor element by increasing the amount of current in the two-dimensional electron gas channel. |
