| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion element exhibiting heat resistance during production process, and having excellent photoelectric conversion efficiency, sensitivity and response speed, and to provide a sensor and an image sensor including the same.SOLUTION: A photoelectric conversion element 1 comprises an electron blocking layer 31 provided between a photoelectric conversion layer 32 and a hole capturing electrode 20. The photoelectric conversion layer 32 consists of a bulk hetero-junction layer 32 of multiple layers mixing fullerene and a p-type organic semiconductor. The bulk hetero-junction layer 32 of multiple layers is laminated so that a layer closer to the electron blocking layer 31 has a higher content of fullerene. First bulk hetero-junction layer 32a adjacent to the electron blocking layer 31 has a content of fullerene of 70 vol% or more, and the difference of content of fullerene between adjacent bulk hetero-junction layers is 15 vol% or less. |
