半导体记忆装置及其制造方法,申请号TW100104972-传众专利搜索

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发明名称	半导体记忆装置及其制造方法
摘要
申请公布号	TWI435419	申请公布日期	2014.04.21
申请号	TW100104972	申请日期	2011.02.15
申请人	东芝股份有限公司日本	发明人	松岛良二
分类号	H01L23/12;H01L23/495	主分类号	H01L23/12
代理机构		代理人	陈长文台北市松山区敦化北路201号7楼
主权项
地址	日本

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