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发明名称
III-V族氮化物半导体基板之制造方法
摘要
申请公布号
TWI435375
申请公布日期
2014.04.21
申请号
TW096107986
申请日期
2007.03.08
申请人
住友化学股份有限公司 日本
发明人
上田和正;西川直宏;笠原健司
分类号
H01L21/205;H01L33/00
主分类号
H01L21/205
代理机构
代理人
洪武雄 台北市中正区杭州南路1段15之1号9楼;陈昭诚 台北市中正区杭州南路1段15之1号9楼
主权项
地址
日本
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