| 摘要 |
<p>The invention relates to a structure adapted for the formation of solar cells, comprising the following successive elements, namely: a sheet (1) of textured metal with crystal grains having an average size greater than 50μm, said sheet being adapted to form a rear face electrode of the cells; a diffusion barrier layer (2) having a thickness of between 0.2 and 2μm, made from an electrically conductive material with crystal grains having an average size greater than 50μm; and a doped multicrystalline silicon layer (3) having a thickness of between 30 and 100μm, with crystal grains having an average size greater than 50 to 100μm, in which the average diffusion length of the carriers is greater than 50μm.</p> |
