SEMICONDUCTOR DEVICE AND FABRICATED METHOD THEREOF

摘要

Provided is a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate having first and second areas separated from each other; a structure formed on the substrate and formed by alternately laminating at least one sacrificial layer and at least one active layer; a first gate-all-around device formed in a first area and including a first nanowire; and a second gate-all-around device formed in a second area and including a second nanowire. The first nanowire is formed at the same level as that of a first active layer among the at least one active layer, and the second nanowire is formed at the same level as that of a second active layer among the at least one active layer. The first active layer is different from the second active layer.