发明名称 HIGH-SPEED GATE DRIVER FOR POWER SWITCHES WITH REDUCED VOLTAGE RINGING
摘要 A fast power switch comprises one or more field-effect transistors, such as pull-up and pull-down transistors, that are coupled to a load. Respective driver electronic circuits for each of the field-effect transistors include parallel first and second drivers with a shared driver output coupled to a gate of the field-effect transistor. The first and second drivers are operative to switch the shared driver output for the appropriate field-effect transistor in response to a transition (e.g., low-to-high or high-to-low) at a driver input terminal. A control circuit enables the stronger second driver in response to a transition at the driver input terminal and subsequently disables the second driver once a transition threshold at the gate of the field-effect transistor(s) is crossed. The weaker first driver is sized to damp reactive energy at the load to minimize ringing.
申请公布号 US2014103962(A1) 申请公布日期 2014.04.17
申请号 US201213649372 申请日期 2012.10.11
申请人 SL3J SYSTEMS S.A.R.L. 发明人 AJRAM SAMI
分类号 H03K3/00 主分类号 H03K3/00
代理机构 代理人
主权项
地址